english
français
Deutsch
Italiano
Español
português
Nederlandse
ελληνικά
日本語
한국
العربية
हिन्दी
Türkçe
indonesia
tiếng Việt
ไทย
বাংলা
فارسی
polski
HN4B01JE(TE85L,F)
Description:
HN4B01JE(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Catégorie:
Semi-conducteur discret
Caractéristiques
Part Number:
HN4B01JE(TE85L,F)
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
HN4B01JE(TE85L,F) More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.39
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Packaging:
Cut Tape (CT)
Transition Frequency:
80 MHz
Max Breakdown Voltage:
50 V
Max Power Dissipation:
100 mW
Max Operating Temperature:
150 °C
Collector Base Voltage (VCBO):
60 V
Collector Emitter Breakdown Voltage:
50 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
2882 In Stock
Applications:
Data storage
Datacom module
Test & measurement
Polarity:
NPN, PNP
Case/Package:
SOT-553
Element Configuration:
Dual
Max Collector Current:
150 mA
Gain Bandwidth Product:
80 MHz
Emitter Base Voltage (VEBO):
5 V
Collector Emitter Voltage (VCEO):
250 mV
Numéro de modèle:
HN4B01JE ((TE85L,F)
Introduction
HN4B01JE(TE85L,F) Overview\\\\nHN4B01JE(TE85L,F) is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HN4B01JE(TE85L,F) high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
Envoyez le RFQ
Courant:
MOQ: