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BFR183E6327HTSA1
Description:
BFR183E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Catégorie:
Semi-conducteur discret
Caractéristiques
Part Number:
BFR183E6327HTSA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BFR183E6327HTSA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.43
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Frequency:
8 GHz
Power Gain:
17.5 dB
Noise Figure:
0.9 dB
Number of Pins:
3
Package Quantity:
3000
Number of Elements:
1
Transition Frequency:
8 GHz
Max Power Dissipation:
450 mW
Min Operating Temperature:
-65 °C
Collector Base Voltage (VCBO):
20 V
Collector Emitter Breakdown Voltage:
12 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
8047 In Stock
Applications:
Medical
Data storage
Polarity:
NPN
Packaging:
Cut Tape (CT)
Case/Package:
SOT
Current Rating:
65 mA
Contact Plating:
Tin
Power Dissipation:
450 mW
Voltage Rating (DC):
12 V
Max Collector Current:
65 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
2 V
Collector Emitter Voltage (VCEO):
12 V
Numéro de modèle:
Le nombre d'émissions de CO2 est déterminé par la méthode suivante:
Introduction
BFR183E6327HTSA1 Overview\\\\nBFR183E6327HTSA1 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFR183E6327HTSA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensivel
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