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DMN3190LDW-7
Description:
DMN3190LDW-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Zetex Semiconductors (Diodes Inc.) stock available at Rozee
Catégorie:
Semi-conducteur discret
Caractéristiques
Part Number:
DMN3190LDW-7
Manufacturer:
Zetex Semiconductors (Diodes Inc.)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
DMN3190LDW-7 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.46
Remark:
Manufacturer: Zetex Semiconductors (Diodes Inc.).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1 mm
Weight:
6.010099 mg
Rise Time:
8.9 ns
Schedule B:
8541210080
Number of Pins:
6
Power Dissipation:
320 mW
Turn-On Delay Time:
4.5 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
122 mΩ
Continuous Drain Current (ID):
1 A
Drain to Source Voltage (Vdss):
30 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
2531 In Stock
Applications:
Wearables (non-medical)
Mobile phones
Factory automation & control
Width:
1.35 mm
Length:
2.2 mm
Fall Time:
15.6 ns
Rds On Max:
190 mΩ
Case/Package:
SOT-363
Input Capacitance:
87 pF
Number of Channels:
2
Turn-Off Delay Time:
30.3 ns
Max Power Dissipation:
320 mW
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
30 V
Numéro de modèle:
DMN3190LDW-7
Introduction
DMN3190LDW-7 Overview\\\\nDMN3190LDW-7 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have DMN3190LDW-7 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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