NVMFD5873NLT1G
Caractéristiques
Part Number:
NVMFD5873NLT1G
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NVMFD5873NLT1G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$2.14
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Packaging:
Cut Tape
Case/Package:
DFN
Input Capacitance:
1.56 nF
Number of Elements:
2
Max Power Dissipation:
3.1 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
60 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
2171 In Stock
Applications:
Body electronics & lighting
TV
Rds On Max:
13 mΩ
Number of Pins:
8
Power Dissipation:
3.1 W
Element Configuration:
Dual
Max Operating Temperature:
175 °C
Drain to Source Resistance:
13 mΩ
Continuous Drain Current (ID):
10 A
Drain to Source Breakdown Voltage:
60 V
Numéro de modèle:
Le code de conduite est le code de conduite de l'appareil.
Introduction
NVMFD5873NLT1G Overview\\\\nNVMFD5873NLT1G is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NVMFD5873NLT1G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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