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IRF5810TRPBF
Description:
IRF5810TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Cypress Semiconductor stock available at Rozee
Catégorie:
Semi-conducteur discret
Caractéristiques
Part Number:
IRF5810TRPBF
Manufacturer:
Cypress Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
IRF5810TRPBF More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Cypress Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
990.6 µm
Fall Time:
53 ns
Rise Time:
14 ns
Resistance:
90 MΩ
Termination:
SMD/SMT
Number of Pins:
6
Power Dissipation:
960 mW
Number of Elements:
2
Dual Supply Voltage:
-20 V
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
90 mΩ
Continuous Drain Current (ID):
2.9 A
Drain to Source Breakdown Voltage:
-20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
303 In Stock
Applications:
Building automation
Factory automation & control
Enterprise projectors
Width:
1.4986 mm
Length:
3 mm
Packaging:
Cut Tape
Rds On Max:
90 mΩ
Nominal Vgs:
-1.2 V
Case/Package:
TSOP
Input Capacitance:
650 pF
Threshold Voltage:
-1.2 V
Turn-On Delay Time:
8.2 ns
Turn-Off Delay Time:
62 ns
Max Power Dissipation:
960 mW
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
12 V
Drain to Source Voltage (Vdss):
20 V
Numéro de modèle:
IRF5810TRPBF
Introduction
IRF5810TRPBF Overview\\nIRF5810TRPBF is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IRF5810TRPBF high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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