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SI6993DQ-T1-E3
Description:
SI6993DQ-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Catégorie:
Semi-conducteur discret
Caractéristiques
Part Number:
SI6993DQ-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI6993DQ-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.0414 mm
Fall Time:
14 ns
Rds On Max:
31 mΩ
Nominal Vgs:
-1 V
Number of Pins:
8
Threshold Voltage:
-1 V
Turn-On Delay Time:
13 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
31 mΩ
Continuous Drain Current (ID):
3.6 A
Drain to Source Breakdown Voltage:
30 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
132 In Stock
Applications:
Building automation
Industrial transport (non-car & non-light truck)
TV
Width:
3.0988 mm
Length:
4.4958 mm
Rise Time:
14 ns
Resistance:
31 mΩ
Case/Package:
TSSOP
Power Dissipation:
830 mW
Number of Elements:
2
Turn-Off Delay Time:
52 ns
Max Power Dissipation:
830 mW
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
-30 V
Numéro de modèle:
Les produits de base doivent être présentés dans un emballage de qualité supérieure.
Introduction
SI6993DQ-T1-E3 Overview\\nSI6993DQ-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI6993DQ-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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