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SI4944DY-T1-E3
Description:
SI4944DY-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Catégorie:
Semi-conducteur discret
Caractéristiques
Part Number:
SI4944DY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI4944DY-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Current:
75 A
Fall Time:
10 ns
Rds On Max:
9.5 mΩ
Nominal Vgs:
3 V
Number of Pins:
8
Threshold Voltage:
3 V
Number of Elements:
2
Turn-Off Delay Time:
40 ns
Max Power Dissipation:
1.3 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
30 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
207 In Stock
Applications:
Wired networking
Lighting
Portable electronics
Height:
1.75 mm
Voltage:
30 V
Rise Time:
10 ns
Resistance:
9.5 mΩ
Case/Package:
SOIC
Power Dissipation:
1.3 W
Number of Channels:
2
Turn-On Delay Time:
10 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
7.5 mΩ
Continuous Drain Current (ID):
9.3 A
Drain to Source Voltage (Vdss):
30 V
Numéro de modèle:
Le nombre d'émissions de CO2 est déterminé par la méthode suivante:
Introduction
SI4944DY-T1-E3 Overview\\nSI4944DY-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI4944DY-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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