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SI8809EDB-T2-E1
Description:
SI8809EDB-T2-E1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
Catégorie:
Semi-conducteur discret
Caractéristiques
Part Number:
SI8809EDB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI8809EDB-T2-E1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Case/Package:
BGA
Power Dissipation:
500 mW
Number of Elements:
1
Max Power Dissipation:
500 mW
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
8 V
Drain to Source Voltage (Vdss):
20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
224 In Stock
Applications:
Wireless infrastructure
Industrial transport (non-car & non-light truck)
Enterprise projectors
Rds On Max:
90 mΩ
Number of Pins:
4
Number of Channels:
1
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
90 mΩ
Continuous Drain Current (ID):
-2.6 A
Numéro de modèle:
Les données de l'échantillon sont fournies par les autorités compétentes.
Introduction
SI8809EDB-T2-E1 Overview\\nSI8809EDB-T2-E1 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI8809EDB-T2-E1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively
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