SISA18DN-T1-GE3
Caractéristiques
Part Number:
SISA18DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SISA18DN-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Packaging:
Digi-Reel®
Rds On Max:
7.5 mΩ
Input Capacitance:
1 nF
Turn-On Delay Time:
22 ns
Max Power Dissipation:
19.8 W
Gate to Source Voltage (Vgs):
2.4 V
Drain to Source Voltage (Vdss):
30 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
583 In Stock
Applications:
Wired networking
Test & measurement
Tablets
Fall Time:
14 ns
Rise Time:
20 ns
Resistance:
7.5 mΩ
Number of Channels:
1
Turn-Off Delay Time:
30 ns
Drain to Source Resistance:
7.5 mΩ
Continuous Drain Current (ID):
38.3 A
Drain to Source Breakdown Voltage:
30 V
Numéro de modèle:
Les données de référence doivent être fournies à l'autorité compétente de l'État membre de l'expédit
Introduction
SISA18DN-T1-GE3 Overview\\nSISA18DN-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SISA18DN-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively
Envoyez le RFQ
Courant:
MOQ:

