STB11NM60N-1
Caractéristiques
Part Number:
STB11NM60N-1
Manufacturer:
STMicroelectronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
STB11NM60N-1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: STMicroelectronics.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Rise Time:
18.5 ns
Case/Package:
TO-262-3
Input Capacitance:
850 pF
Number of Elements:
1
Turn-Off Delay Time:
50 ns
Max Power Dissipation:
90 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
25 V
Drain to Source Voltage (Vdss):
600 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
572 In Stock
Applications:
Wireless infrastructure
Lighting
Gaming
Fall Time:
12 ns
Rds On Max:
450 mΩ
Number of Pins:
3
Power Dissipation:
90 W
Turn-On Delay Time:
22 ns
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
450 mΩ
Continuous Drain Current (ID):
10 A
Drain to Source Breakdown Voltage:
600 V
Numéro de modèle:
Le numéro de téléphone est le numéro de téléphone de l'entreprise.
Introduction
STB11NM60N-1 Overview\\nSTB11NM60N-1 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have STB11NM60N-1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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