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SI6463BDQ-T1-E3
Description:
SI6463BDQ-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
Catégorie:
Semi-conducteur discret
Caractéristiques
Part Number:
SI6463BDQ-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI6463BDQ-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.0414 mm
Fall Time:
40 ns
Rds On Max:
15 mΩ
Case/Package:
TSSOP
Power Dissipation:
1.05 W
Turn-On Delay Time:
35 ns
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
15 mΩ
Continuous Drain Current (ID):
6.2 A
Drain to Source Breakdown Voltage:
-20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
22 In Stock
Applications:
Wireless infrastructure
Factory automation & control
Wearables (non-medical)
Width:
3.0988 mm
Length:
4.4958 mm
Rise Time:
40 ns
Resistance:
15 mΩ
Number of Pins:
8
Number of Elements:
1
Turn-Off Delay Time:
190 ns
Max Power Dissipation:
1.05 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
8 V
Drain to Source Voltage (Vdss):
20 V
Numéro de modèle:
SI6463BDQ-T1-E3
Introduction
SI6463BDQ-T1-E3 Overview\\nSI6463BDQ-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI6463BDQ-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively
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